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| Shenzhen Shengyuan Semiconductors Co., LTD. Product Specification www..com EB SERIES TRANSISTORS FEATURES APPLICATION HIGH VOLTAGE CAPABILITY FLUORESCENT LAMP HIGH SPEED SWITCHING ELECTRONIC BALLAST EB13003 WIDE SOA ELECTRONIC TRANSFORMER Absolute Maximum Ratings PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Tc=25 C SYMBOL VCBO VCEO VEBO IC PC Tj Tstg VALUE 600 400 9 1 30 150 -65-150 TO-126 UNIT V V V A W C C Electronic Characteristics CHARACTERISTICS Collector-Base Cutoff Current Collector-Emitter Cutoff Current Collector-Emitter Voltage Emitter-Base Voltage Tc=25 C SYMBOL ICBO ICEO VCEO VEBO TEST CONDITION VCB=600V VCE=400V,IB=0 IC=10mA,IB=0 IE=1mA,IC=0 IC=0.2A,IB=0.04A 400 9 0.5 0.7 2.0 1.2 8 10 8 3 S 0.8 40 V V MIN MAX 100 250 UNIT A A V V Collector-Emitter Saturation Voltage Vce IC=0.75A,IB=0.25A IC=1.5A,IB=0.5A Base-Emitter Saturation Voltage Vb IC=0.75A,IB=0.25A VCE=5V,IC=10mA DC Current Gain hFE VCE=5V,IC=0.5A VCE=5V,IC=1.0A Storage Time Falling Time tS tf VCC=250V, IC=5IB IB1= -IB2=0.2A Shengyuan semiconductors 2004.10 1 |
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